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NTJD4152PT1G

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ZhongHao Industry Limited

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NTJD4152PT1G

Description : NTJD4152PT1G SOT-363-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	880 mA
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	2.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	272 mW
Channel Mode:	Enhancement
Series:	NTJD4152P
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Dual
Fall Time:	3.5 ns
Forward Transconductance - Min:	3 S
Height:	0.9 mm
Length:	2 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	6.5 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	2 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	13.5 ns
Typical Turn-On Delay Time:	5.8 ns
Width:	1.25 mm
Unit Weight:	0.000265 oz

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