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FDN352AP

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ZhongHao Industry Limited

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FDN352AP

Description : FDN352AP SSOT-3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SSOT-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	1.3 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	1.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Series:	FDN352AP
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	2 S
Height:	1.12 mm
Length:	2.9 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	15 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	4 ns
Width:	1.4 mm
Part # Aliases:	FDN352AP_NL
Unit Weight:	0.001058 oz

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