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NTS2101PT1G

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ZhongHao Industry Limited

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NTS2101PT1G

Description : NTS2101PT1G SOT-323-3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	1.4 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	6.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	290 mW
Channel Mode:	Enhancement
Series:	NTS2101P
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	18 ns
Height:	0.85 mm
Length:	2.1 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	15 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	6.2 ns
Width:	1.24 mm
Unit Weight:	0.000212 oz

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